发明名称 DIODE, SEMICONDUCTOR MODULE AND POWER CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a diode which can inhibit a surge voltage and an EMI noise; and provide a power circuit which operates at high speed and with low loss while achieving downsizing by using the diode.SOLUTION: In a diode, a capacitor structure area in which a dielectric is included is formed in a rectifier area of the diode. A low-concentration player is formed under the dielectric so as to exhibit characteristics in which capacity of a capacitor becomes lower with the increase of a voltage when a low-voltage is applied and exhibit characteristics in which capacity degradation of the capacitor is saturated when a high-voltage such as a power source voltage is applied. A ratio between an area of a capacitor structure region and an area of a rectifier region and a thickness of a dielectric film are adjusted so as to obtain predetermined characteristics.
申请公布号 JP2013145831(A) 申请公布日期 2013.07.25
申请号 JP20120006157 申请日期 2012.01.16
申请人 NIPPON INTER ELECTRONICS CORP 发明人 INADA MASAKI
分类号 H01L29/861;H01L29/06;H01L29/47;H01L29/868;H01L29/872 主分类号 H01L29/861
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