发明名称 |
DIODE, SEMICONDUCTOR MODULE AND POWER CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a diode which can inhibit a surge voltage and an EMI noise; and provide a power circuit which operates at high speed and with low loss while achieving downsizing by using the diode.SOLUTION: In a diode, a capacitor structure area in which a dielectric is included is formed in a rectifier area of the diode. A low-concentration player is formed under the dielectric so as to exhibit characteristics in which capacity of a capacitor becomes lower with the increase of a voltage when a low-voltage is applied and exhibit characteristics in which capacity degradation of the capacitor is saturated when a high-voltage such as a power source voltage is applied. A ratio between an area of a capacitor structure region and an area of a rectifier region and a thickness of a dielectric film are adjusted so as to obtain predetermined characteristics. |
申请公布号 |
JP2013145831(A) |
申请公布日期 |
2013.07.25 |
申请号 |
JP20120006157 |
申请日期 |
2012.01.16 |
申请人 |
NIPPON INTER ELECTRONICS CORP |
发明人 |
INADA MASAKI |
分类号 |
H01L29/861;H01L29/06;H01L29/47;H01L29/868;H01L29/872 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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