发明名称 |
Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation |
摘要 |
Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.
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申请公布号 |
US8481353(B2) |
申请公布日期 |
2013.07.09 |
申请号 |
US201113086787 |
申请日期 |
2011.04.14 |
申请人 |
PENG LUNG-HAN;YU JENG-WEI;YEH PO-CHUN;OPTO TECH CORPORATION |
发明人 |
PENG LUNG-HAN;YU JENG-WEI;YEH PO-CHUN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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