SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve an electrical characteristic by forming a copper line structure which has a metal pattern and no void. CONSTITUTION: A substrate(100) includes a cell region and a peripheral circuit region. A trench(120) is formed in the upper part of an interlayer insulating layer(110). A line structure(180) fills a trench passing through a part of the interlayer insulating layer. The line structure includes a barrier layer pattern(135), a metal pattern(175), and a wetting promotion layer pattern(165). The metal pattern has no void. The wetting promotion film pattern is formed in the central part of the trench.