BONDING METHOD BETWEEN METAL SUBSTRATE AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD

摘要

PURPOSE: A bonding method between a metal substrate and a semiconductor substrate and a semiconductor device manufactured by the method are provided to save manufacturing costs by omitting an additional planarization process. CONSTITUTION: A metal substrate(20) is formed in a flat mold. The metal substrate is separated from the flat mold. A first metal substrate bonding layer(21) and a metal substrate junction layer(24) are formed in the separation surface of the metal substrate. A first semiconductor substrate bonding layer and a semiconductor substrate junction layer are formed in a semiconductor substrate. The metal substrate junction layer faces the semiconductor substrate junction layer. [Reference numerals] (20) Metal substrate; (21) First metal substrate bonding layer; (22) Metal substrate anti-diffusion layer; (23) Second metal substrate bonding layer; (24) Metal substrate junction layer