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发明名称
Herstellungsverfahren für einen gleichmäßig dotierten SiC-Volumeneinkristall und gleichmäßig dotiertes SiC-Substrat
摘要
申请公布号
DE102008063124(B4)
申请公布日期
2013.05.16
申请号
DE20081063124
申请日期
2008.12.24
申请人
SICRYSTAL AG
发明人
STRAUBINGER, THOMAS, DR.;WOHLFART, ANDREAS, DR.;KOELBL, MARTIN
分类号
C30B23/02;C30B29/36
主分类号
C30B23/02
代理机构
代理人
主权项
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