| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern and a resist composition capable of forming a negative pattern with high resolution and in good shape. <P>SOLUTION: There is provided a method for forming a resist pattern, the method comprising the steps of: (1) forming a resist film by applying a resist composition comprising a base component whose solubility to an alkali developing solution is increased by an action of an acid and a compound represented by the general formula (C1) onto a support; (2) exposing the resist film to light; (3) baking the film after the step (2); and (4) subjecting the resist film to alkali developing to form a negative resist pattern in which the unexposed portion of the resist film is dissolved and removed, and the resist composition used in the step (1). In the formula, at least either one of R<SP POS="POST">1</SP>or R<SP POS="POST">2</SP>is an alkyl group or a phenyl group. <P>COPYRIGHT: (C)2013,JPO&INPIT |
