发明名称 |
SEMICONDUCTOR DEVICE, DISPLAY PANEL, DISPLAY MODULE, ELECTRONIC DEVICE AND DISPLAY DEVICE |
摘要 |
It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor. |
申请公布号 |
KR20130032916(A) |
申请公布日期 |
2013.04.02 |
申请号 |
KR20137005862 |
申请日期 |
2010.08.23 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;NODA KOSEI;SAKAKURA MASAYUKI;OIKAWA YOSHIAKI;MARUYAMA HOTAKA |
分类号 |
H01L29/786;G02F1/136;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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