| 发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING SINGLE CRYSTAL INGOT |
| 摘要 |
PURPOSE: A method and an apparatus for manufacturing single crystal ingot are provided to grow a low oxygen silicon single crystal and to improve yield. CONSTITUTION: Inactive gas is periodically supplied to melt silicon in a growth chamber(9). The pressure of the growth chamber is changed. The inactive gas is argon.
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| 申请公布号 |
KR20130029876(A) |
申请公布日期 |
2013.03.26 |
| 申请号 |
KR20110093248 |
申请日期 |
2011.09.16 |
| 申请人 |
LG SILTRON INCORPORATED |
发明人 |
CHOI, IL SOO;KIM, BONG WOO;AHN, JIN WOO;KIM, DO YEON |
| 分类号 |
C30B15/00;C30B15/20;C30B29/06 |
主分类号 |
C30B15/00 |
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