SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a semiconductor light-emitting diode comprising: a metal electrode; a column support unit formed of an n-type semiconductor material on the metal electrode; an n-type cladding including a column unit having a plurality of columns made of the n-type semiconductor material on the column support unit; an active unit which is formed so as to be conformal such that the active unit surrounds the column unit, and which is formed so as to be conformal on the column support unit between the column units, and which has quantum well layers and barrier layers alternately stacked therein; a p-type cladding formed of a p-type semiconductor material to be conformal on the active layer; and a transparent electrode formed on the p-type cladding.