| 摘要 |
It is provided a transistor, a method for manufacturing the transistor, and a semiconductor chip comprising the transistor. A method for manufacturing a transistor may comprise: defining an active area on a semiconductor substrate, and forming on the active area a gate stack, a primary spacer, and source/drain regions, wherein the primary spacer surrounds the gate stack, and the source/drain regions are embedded in the active area and self-aligned with opposite sides of the primary spacer; forming a semiconductor spacer surrounding the primary spacer, and cutting off the ends of the semiconductor spacer in the width direction of the gate stack so as to isolate the source/drain regions from each other; and covering the surfaces of the source/drain regions and the semiconductor spacer with a layer of metal or alloy, and annealing the resulting structure, so that a metal silicide is formed on the surfaces of the source/drain regions, and so that the semiconductor spacer is transformed into a silicide spacer simultaneously. As such, the risk of transistor failure due to atoms or ions of Ni entering the channel region through the source/drain extension regions is reduced.
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