发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate, wherein the substrate comprises a gate structure thereon; forming a film stack on the substrate and covering the gate structure, wherein the film stack comprises at least an oxide layer and a nitride layer; removing a portion of the film stack for forming recesses adjacent to two sides of the gate structure and a disposable spacer on the sidewall of the gate structure; and filling the recesses with a material comprising silicon atoms for forming a faceted material layer.
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申请公布号 |
US2012309171(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201113118473 |
申请日期 |
2011.05.30 |
申请人 |
LU TSUO-WEN;TENG WEN-YI;WANG YU-REN;HUANG GIN-CHEN;LIN CHIEN-LIANG;WANG SHAO-WEI;YEN YING-WEI;CHENG YA-CHI;CHAN SHU-YEN;YANG CHAN-LON |
发明人 |
LU TSUO-WEN;TENG WEN-YI;WANG YU-REN;HUANG GIN-CHEN;LIN CHIEN-LIANG;WANG SHAO-WEI;YEN YING-WEI;CHENG YA-CHI;CHAN SHU-YEN;YANG CHAN-LON |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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