Solid-state imaging device and method for manufacturing same

摘要

A solid-state imaging device includes: a semiconductor substrate having a plurality of vertical transfer channel regions and a plurality of photoelectric conversion regions arranged in a matrix; a plurality of vertical transfer electrodes, each constructed of a gate electrode and a first metal light-shielding film, formed via a gate insulating film; a transparent insulating film formed in gaps existing between the vertical transfer electrodes above the vertical transfer channel regions; and a second metal light-shielding film formed via a first interlayer insulating film to cover at least the vertical transfer channel regions.