| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the characteristics of a nitride semiconductor laser device having a convex ridge composed of a p-type cladding layer made from Mg-doped AlGaN. <P>SOLUTION: After forming a ridge portion 16A by dry-etching a p-type cladding layer 16 made from Mg-doped AlGaN, a surface of the p-type cladding layer 16 is wet-etched using hot phosphoric acid. As a result of this step, a damage layer on the side surfaces of the ridge portion 16A can be removed while maintaining controllability of the depth (film thickness) of the p-type cladding layer 16 on both sides of the ridge portion 16A. <P>COPYRIGHT: (C)2012,JPO&INPIT |
