发明名称 |
Air Isolation In High Density Non-Volatile Memory |
摘要 |
Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Air gaps are formed at least partially in isolation regions between active areas of the substrate. The air gaps may further extend above the substrate surface between adjacent layer stack columns. A sacrificial material is formed at least partially in the isolation regions, followed by forming a dielectric liner. The sacrificial material is removed to define air gaps prior to forming the control gate layer and then etching it and the layer stack columns to form individual control gates and columns of non-volatile storage elements. |
申请公布号 |
US2012178235(A1) |
申请公布日期 |
2012.07.12 |
申请号 |
US201213348619 |
申请日期 |
2012.01.11 |
申请人 |
PACHAMUTHU JAYAVEL;PURAYATH VINOD R.;MATAMIS GEORGE |
发明人 |
PACHAMUTHU JAYAVEL;PURAYATH VINOD R.;MATAMIS GEORGE |
分类号 |
H01L21/764 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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