WIRING STRUCTURES, METHODS OF MANUFACTURING A WIRING STRUCTURE, AND SEMICONDUCTOR DEVICES INCLUDING A WIRING STRUCTURE

摘要

PURPOSE: A wiring structure, a manufacturing method thereof, and a semiconductor device including the same are provided to easily remove hydrogen in a first interlayer dielectric layer and a second interlayer dielectric layer through a thermal process by forming a diffusion preventing layer pattern on only the upper side of a wire. CONSTITUTION: A first interlayer dielectric layer(120) is formed on a substrate(100). A contact plug(130) passes through the first interlayer dielectric layer. A barrier film is formed on the outer sidewall of the contact plug. A wire(160) fills a part of an opening exposing the contact plug. A diffusion preventing layer pattern(170) is formed in the wire and fills the remaining part of the opening.