发明名称 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
摘要 A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
申请公布号 US2012135350(A1) 申请公布日期 2012.05.31
申请号 US201113303302 申请日期 2011.11.23
申请人 发明人 KOBAYASHI TOMOHIRO;FUKUDA EIJI;NAGASAWA TAKAYUKI;TANIGUCHI RYOSUKE;OHSAWA YOUICHI;SAGEHASHI MASAYOSHI;KAWAI YOSHIO
分类号 G03F7/20;G03F7/027 主分类号 G03F7/20
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