| 摘要 |
Provided are a semiconductor device that can be fabricated easily and can achieve leakage current reduction, without its structure becoming complex or the device becoming bulky an active matrix substrate in which the device is used; and a display device in which the device is used. A switching portion (18) (semiconductor device) provided with thin film transistors (Tr1, Tr2) having a top gate electrodes (g1, g2) (main gate electrodes) and a bottom gate electrode (21) (auxiliary gate electrode) includes a silicon layer (SL) (semiconductor layer) provided between the top gate electrodes (g1, g2) and the bottom gate electrode (21); and a light shielding film that shields a carrier generation region formed in the silicon layer from light. A potential of the top gate electrodes (g1, g2) is controlled by a gate signal supplied via a signal line, and a potential of the bottom gate electrode (21) is determined depending on capacity coupling between the bottom gate electrode (21) and the top gate electrodes (g1, g2).
|
