发明名称 Thin film transistor substrate including a horizontal part passing through a central region between the gate lines and dividing each of the pixel regions into an upper half and a lower half
摘要 A thin film transistor (TFT) substrate includes: a plurality of gate lines extending in one direction, a plurality of data lines extending in a direction intersecting the gate lines, a pixel electrode formed in a pixel region defined by an intersection of the gate line and the data line, and with one side of the pixel electrode overlapping a portion of one data line and another side of the pixel electrode overlapping a portion of another data line. The TFT further includes a storage electrode line having a storage electrode disposed in a central portion of the pixel region.
申请公布号 US8174658(B2) 申请公布日期 2012.05.08
申请号 US201113014320 申请日期 2011.01.26
申请人 KIM DONG-GYU;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM DONG-GYU
分类号 G02F1/1343 主分类号 G02F1/1343
代理机构 代理人
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