| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device including a method of forming a thick coating film having a uniform film thickness. <P>SOLUTION: A first coating film having a buildup part on the outer periphery of a semiconductor wafer formed by coating a highly viscous resist 3 is coated with a low viscous resist by dynamic dispensation with high rotation. A film thickness of the buildup part is set substantially equal to the sum of the film thickness of the first coating film and the film thickness of a second coating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
