发明名称 |
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LASER ELEMENT |
摘要 |
A method for manufacturing a nitride semiconductor laser element has: (a) forming a nitride semiconductor layer on a substrate; (b) forming a ridge on a surface of the nitride semiconductor; (c) forming a first protective film on the nitride semiconductor layer including the ridge; (d) removing the first protective film from at least a top face of the ridge; (e) forming a conductive layer composed of a two or more of multilayer film with different compositions on the first protective film and the nitride semiconductor layer including the ridge, and introducing a gap at locations of at least at the uppermost conductive layer corresponding to the base portion from the ridge shoulders; and (f) removing part of the conductive layer through a gap to form a void defined the first protective film and the conductive layer at least on the ridge base portions. |
申请公布号 |
US2012058585(A1) |
申请公布日期 |
2012.03.08 |
申请号 |
US201113225935 |
申请日期 |
2011.09.06 |
申请人 |
MAEGAWA HITOSHI;NONAKA MITSUHIRO;SUGIMOTO YASUNOBU;NICHIA CORPORATION |
发明人 |
MAEGAWA HITOSHI;NONAKA MITSUHIRO;SUGIMOTO YASUNOBU |
分类号 |
H01L33/26 |
主分类号 |
H01L33/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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