| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce contact resistance (injection resistance) to a channel region while ensuring the film quality of an organic semiconductor layer, in a top contact structure in which a source electrode/drain electrode and the organic semiconductor layer are contacted with each other strongly. <P>SOLUTION: A semiconductor device 1 has: a gate electrode 13 provided on a substrate 11; a gate insulating film 15 covering the gate electrode 13; an organic semiconductor layer 17 arranged so as to be overlapped with an upper part of the gate electrode 13 via the gate insulating film 15 within a range of a width of the gate electrode 13; and a source electrode 19s and a drain electrode 19d whose end parts are opposed to each other and arranged on the organic semiconductor layer 17 in a state that the gate electrode 13 is sandwiched in the width direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
