发明名称 |
METHOD OF PRODUCING GROUP 13 METAL NITRIDE CRYSTAL, GROUP 13 METAL NITRIDE CRYSTAL OBTAINED BY THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a group 13 metal nitride crystal for greatly improving a generation speed of a group 13 metal nitride crystal and for producing a high-quality crystal. <P>SOLUTION: The method of manufacturing a group 13 metal nitride crystal includes: a process of fabricating a solution by dissolving a raw material 100 in a solvent 101; and a process of growing a crystal of a group 13 metal nitride within the solution. In the manufacturing method, the solution includes a group 17 element, and pressure within a reaction vessel 102 is less than 1.0 atm in the crystal growth process. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011256055(A) |
申请公布日期 |
2011.12.22 |
申请号 |
JP20100129234 |
申请日期 |
2010.06.04 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
SAITO TAKEYA |
分类号 |
C30B29/38;C30B9/12;H01L21/208 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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