发明名称 METHOD OF PRODUCING GROUP 13 METAL NITRIDE CRYSTAL, GROUP 13 METAL NITRIDE CRYSTAL OBTAINED BY THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a group 13 metal nitride crystal for greatly improving a generation speed of a group 13 metal nitride crystal and for producing a high-quality crystal. <P>SOLUTION: The method of manufacturing a group 13 metal nitride crystal includes: a process of fabricating a solution by dissolving a raw material 100 in a solvent 101; and a process of growing a crystal of a group 13 metal nitride within the solution. In the manufacturing method, the solution includes a group 17 element, and pressure within a reaction vessel 102 is less than 1.0 atm in the crystal growth process. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011256055(A) 申请公布日期 2011.12.22
申请号 JP20100129234 申请日期 2010.06.04
申请人 MITSUBISHI CHEMICALS CORP 发明人 SAITO TAKEYA
分类号 C30B29/38;C30B9/12;H01L21/208 主分类号 C30B29/38
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