发明名称 |
Fin structures and methods of fabricating fin structures |
摘要 |
There is provided fin structures and methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may include two fins separated by a channel, wherein the fins may be employed as fins of a field effect transistor. The fin structures are formed below the upper surface of the substrate, and may be formed without utilizing a photolithographic mask to etch the fins. |
申请公布号 |
US8076721(B2) |
申请公布日期 |
2011.12.13 |
申请号 |
US20100795495 |
申请日期 |
2010.06.07 |
申请人 |
TANG SAHN D.;HALLER GORDON;MICRON TECHNOLOGY, INC. |
发明人 |
TANG SAHN D.;HALLER GORDON |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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