发明名称 Bonding method for through-silicon-via based 3D wafer stacking
摘要 There is described a bonding method for through-silicon-via bonding of a wafer stack in which the wafers are formed with through-silicon-vias and lateral microchannels that are filled with solder. To fill the vias and channels the wafer stack is placed in a soldering chamber and molten solder is drawn through the vias and channels by vacuum. The wafers are held together by layers of adhesive during the assembly of the wafer stack. Means are provided for local reheating of the solder after it has cooled to soften the solder to enable it to be removed from the soldering chamber.
申请公布号 US8030208(B2) 申请公布日期 2011.10.04
申请号 US20080131777 申请日期 2008.06.02
申请人 HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCHINSTITUTE COMPANY LIMITED 发明人 LEUNG CHI KUEN VINCENT;SUN PENG;SHI XUNQING;CHUNG CHANG HWA
分类号 H01L21/4763 主分类号 H01L21/4763
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