| 摘要 |
A process for fabricating a silicon-based thin-film photovoltaic cell, applicable for example in the energy generation field. The fabrication process includes a) depositing a p-doped or n-doped amorphous silicon film, the X-ray diffraction spectrum of which has a line centered at 28° that has a mid-height width, denoted by a, such that 4.7°≦̸a<6.0°, on a substrate.
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