SIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A SiC semiconductor device and a manufacturing method thereof are provided to prevent the deviation of channel lengths by etching an impurity region and a mark region with the same mask while aligning the impurity region and the mark region. CONSTITUTION: In a SiC semiconductor device and a manufacturing method thereof, a SiC semiconductor layer(2) is formed on a substrate(1). A well region(3) is selectively formed in the surface of the SiC semiconductor layer. An impurity implantation region is selectively formed on the well region. A concave part is formed in the impurity implantation region excluding the surface end thereof. An area near the end region is a curved hook which is formed upwardly.