发明名称 SEMICONDUCTOR ELECTRONIC COMPONENTS AND CIRCUITS
摘要 An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.
申请公布号 US2011193619(A1) 申请公布日期 2011.08.11
申请号 US20100701458 申请日期 2010.02.05
申请人 TRANSPHORM INC. 发明人 PARIKH PRIMIT;HONEA JAMES;BLAKE, JR. CARL C.;COFFIE ROBERT;WU YIFENG;MISHRA UMESH
分类号 H03K3/01;H01L27/06 主分类号 H03K3/01
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