发明名称 |
Metallic silicon and method for manufacturing the same |
摘要 |
This metallic silicon is manufactured by refining molten crude metallic silicon by unidirectional solidification, and has a purity of 3N or more to 6N or less and an average crystal grain diameter of 1 mm or more. This method for manufacturing the metallic silicon includes: solidifying molten crude metallic silicon in a mold which contains fine silica particles in an inner peripheral layer thereof by unidirectional solidification at a rate of 1 mm/min or less; and then cooling to 200° C. or below at a rate of 2° C./min or less.
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申请公布号 |
US7955583(B2) |
申请公布日期 |
2011.06.07 |
申请号 |
US20070438763 |
申请日期 |
2007.08.31 |
申请人 |
MITSUBISHI MATERIALS CORPORATION;MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD. |
发明人 |
TSUZUKIHASHI KOUJI;IKEDA HIROSHI;YANAGIMACHI ATSUO;WAKITA SABURO |
分类号 |
C01B33/02 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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