发明名称 COMPOSITE STRUCTURE OF GRAPHENE AND NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: The composite structure of graphene and nanostructure and a method for manufacturing the same are provided to obtain three dimensional composite structure by passing one dimensional nanostructure through two dimensional graphene with the high electric conductivity. CONSTITUTION: The composite structure(100) of graphene and nanostructure includes at least one graphene(120) and at least one nanostructure(110) passing through the graphene. The nanostructure includes one dimensional shape and includes nanowires, nanotubes, or nanorods. The nanostructure is one selected from a group including IV-family semiconductor, III-V-family semiconductor, II-VI-family semiconductor, IV-VI-family semiconductor, IV-V-VI-family semiconductor, oxide semiconductor, nitride semiconductor, and metal.
申请公布号 KR20110054317(A) 申请公布日期 2011.05.25
申请号 KR20090110922 申请日期 2009.11.17
申请人 SAMSUNG ELECTRONICS CO., LTD.;SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION 发明人 CHOI, BYOUNG LYONG;LEE, EUN KYUNG;WHANG, DONG MOK;KIM, BYUNG SUNG
分类号 B82B1/00;B82B3/00 主分类号 B82B1/00
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