| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that optimally selects an activated word line address when a refresh command is input. SOLUTION: The semiconductor memory device including 8 Banks is divided into an X13N-X12N area, an X13N-X12T area, an X13T-X12N area, and an X13T-X12T area. During refresh, in the Banks 0 and 1, and the Banks 6 and 7, the word lines of the X13N-X12N area and the X13T-X12N area are activated. In the Banks 2 and 3, and the Banks 4 and 5, the word lines of the X13N-X12T area and the X13T-X12T area are activated. VSSSA pads connected to an activated sense amplifier column are pads 301, 303, 311, and 313 in the Banks 0 and 1 and the Banks 6 and 7, and pads 302, 304, 312, and 314 in the Banks 2 and 3 and the Banks 4 and 5, and current concentration on the VSSSA pads is suppressed. COPYRIGHT: (C)2011,JPO&INPIT
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