发明名称 GAS-PHASE TREATMENT DEVICE, GAS-PHASE TREATMENT METHOD, AND SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a gas-phase treatment device capable of keeping the quality of treatment well even when different treatment is performed, and a gas-phase treatment method. SOLUTION: This gas-phase treatment device 1 includes: a treatment chamber 4 for circulating a reaction gas; gas supply openings 13-15 as a plurality of gas introduction parts formed along the circulation direction of the reaction gas on a first wall surface (upper wall 6) of the treatment chamber 4; gas supply parts capable of supplying gas from each of one gas introduction part and another gas introduction part different from the one gas introduction part into the treatment chamber 4 in the gas supply openings 13-15 as the plurality of gas introduction parts. The plurality of gas supply parts includes first buffer chambers (buffer chambers 23-25) for supplying the gas to the gas introduction parts from the gas supply parts, and flow regulation parts 50 for supplying the gas to the first buffer chambers at uniform pressure, wherein the first buffer chambers are located on the downstream side in the gas circulation direction with respect to the flow regulation parts 50. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011035201(A) 申请公布日期 2011.02.17
申请号 JP20090180799 申请日期 2009.08.03
申请人 SUMITOMO ELECTRIC IND LTD 发明人 TAKASUKA EIRYO;NISHIZUKA KOJI;UEDA TOSHIO;KURAMOTO TOSHIYUKI;TSUCHIMOCHI KEIJI
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
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