发明名称 HIGH POWER DENSITY BETAVOLTAIC BATTERY
摘要 To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given.
申请公布号 US2011031572(A1) 申请公布日期 2011.02.10
申请号 US20100851555 申请日期 2010.08.06
申请人 SPENCER MICHAEL;CHANDRASHEKHAR MVS 发明人 SPENCER MICHAEL;CHANDRASHEKHAR MVS
分类号 H01L29/66 主分类号 H01L29/66
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