| 摘要 |
<p>A method of fabricating a high-voltage transistor (80) on a substrate (81,100), the method comprising:
forming a plurality of parallel arranged drift regions (82) comprising a doped semiconductor layer of a first conductivity type interleaved with an insulating layer (88,102) surrounding a conducting layer, the conducting layers each comprising a field plate member (84,103);
forming source (87,105) and body regions (86,107), the body regions separating the source regions from the drift regions; and
forming insulated gates (90) adjacent the body regions, the insulated gates defining channels in the body regions between the source regions and the drift regions.
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