发明名称 |
SOLAR CELL AND FABRICATION METHOD THEREOF |
摘要 |
The present invention relates to a solar cell and a fabrication method thereof, whereby the method includes doping a silicon substrate having a first conductive type impurity with a second conductive type impurity, the second conductive type impurity being opposite to the first conductive type impurity, and thereby forming an emitter layer at a front surface part of the silicon substrate; forming an antireflection film on the emitter layer; forming a front electrode on the antireflection film; forming a rear electrode on a rear surface of the silicon substrate; and forming a back surface field layer at a rear surface part of the silicon substrate, the back surface field layer having a concentration of the first conductive type impurity that is higher than that of the silicon substrate, the back surface field layer having a different concentration of the second conductive type impurity from that of the emitter layer. |
申请公布号 |
WO2010150948(A1) |
申请公布日期 |
2010.12.29 |
申请号 |
WO2009KR06046 |
申请日期 |
2009.10.20 |
申请人 |
LG ELECTRONICS INC.;PARK, HYUN JUNG;KIM, JIN HO |
发明人 |
PARK, HYUN JUNG;KIM, JIN HO |
分类号 |
H01L31/042 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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