ADAPTIVELY PLASMA SOURCE AND PLASMA CHAMBER FOR PROCESSING A LARGE-DIAMETER WAFER

摘要

PURPOSE: An adaptive plasma source and a plasma chamber for processing a large diameter wafer are provided to precisely control plasma density by using an ACP(Adaptively Coupled Plasma) source of the edge and a CCP(Capacitively Coupled Plasma) source function of the center. CONSTITUTION: A CCP top electrode(210) is arranged in the center. A conductive bushing(220) is arranged in order to surround the CCP top electrode. A source coil(230) is branched from the conductive bushing. The source coil is spirally arranged around the conductive bushing. The top RF source is connected to the CCP top electrode and the conductive bushing. The CCP top electrode is made of Al materials. The bushing is made of Cu materials.