| 摘要 |
A thin film transistor (TFT), a method of fabricating the same, and a display device including the TFT, are provided. The method includes forming an edge region that is doped with impurities of a conductivity type opposite to a conductivity type of impurities doped into source and drain regions. The edge region is in contact with a channel region and an edge portion of the source region. The method also includes forming contact holes for source and drain electrodes to expose a portion of the drain region and expose respective portions of the source region and the edge region contacting the edge portion of the source region; and forming source and drain electrodes. Thus, a source-body contact is automatically formed so that an edge effect can be reduced and a kink effect can be reduced or removed.
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