| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a polycrystalline silicon film with improved degree of orientation of a (110) face without adding nickel or the like. Ž<P>SOLUTION: A method for manufacturing a crystalline semiconductor film 32 is configured to alternately and repeatedly execute a first step and a second step. The first step is configured such that a laser beam 4 is irradiated to a region 10 to be irradiated of an amorphous semiconductor film 3 deposited on a substrate 1 so as to make a part of the region 10 to be irradiated as a molten region 20, then, the amorphous semiconductor film 3 in a molten state is recrystallized toward the center direction of the molten region 20. The second step is configured to move the region 10 to be irradiated in a minor-axis direction. In the first step, the laser beam 4 is irradiated such that a non-polycrystalline region 36, where the molten amorphous semiconductor film 3 is solidified before the crystal growth from both ends progresses and joins, intermittently exists in a major-axis direction of the region 10 to be irradiated. In the second step, the region 10 to be irradiated is moved such that the non-polycrystalline region 36 formed in the Nth first step is included in a molten region 22 formed in the (N+1)th first step. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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