| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent breakdowns of an insulating film between stacked gates and a gate insulating film of a transistor in an NAND cell, even if an etching residue of a polysilicon film for forming a floating gate is generated in the column direction along a projection side face of an STI region at an end in the row direction of a cell array of an NAND type flash memory. Ž<P>SOLUTION: At an end in the row direction of a cell array of NAND cells in which selection gate transistors having a stacked gate structure are connected in series to a plurality of memory cell transistors having a stacked gate structure on a semiconductor substrate 30 of an NAND type flash memory, an STI region 20 is formed in the column direction, and dummy NAND cells are formed at an end portion in the row direction. Grooves 35 for connecting between gates do not exist in an insulating film 34 formed between the stacked gates 33 and 32 of the selection gate transistors of the dummy NAND cells, and the stacked gates of the selection gate transistors are formed in the state of being insulated therebetween. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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