| 摘要 |
PURPOSE: A nonvolatile memory device is provided to reduce the number of bit lines by connecting one pair of cell strings or many cell strings to one bit line. CONSTITUTION: Memory blocks comprise a plurality of cell strings. The memory blocks include bit lines connected to one pair of cell strings comprised of even cell strings and odd cell strings. A page buffer unit(220) stores data to be programmed in the selected memory cell. The page buffer unit reads data stored in the selected memory cell. The page buffer unit stores the read data. A bit line voltage controller(221) is connected to bit lines and provides a variable voltage according to a control signal. |
