| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-resistance SiC semiconductor device which causes neither a crack nor a deformation in a substrate during a manufacturing process, and a method of manufacturing the same. SOLUTION: The SiC semiconductor device includes the SiC substrate 1 of a first conductivity type having first and second principal surfaces, a trench 4 formed on the first principal surface of the SiC substrate 1, and CNTs 5 formed in the trench 4. The method of manufacturing the SiC semiconductor device includes a process (a) of forming a mask 8 on the first principal surface of the SiC substrate 1, a process (b) of selectively forming the trench 4 on the SiC substrate 1 from the first principal surface using the mask 8, and a process (c) of selectively forming the CNTs 5 in the trench 4 using the mask 8. COPYRIGHT: (C)2010,JPO&INPIT |
