| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of dry-etching a silicon nitride film increasing the throughput. SOLUTION: In the method of dry-etching the silicon nitride film 103 for dry-etching the silicon nitride film 103, the silicon nitride film 103 is dry-etched with no generation of plasma by using a process gas at least containing a hydrogen fluoride gas (HF gas) and a fluorine gas (F<SB>2</SB>gas) for an object to be processed 100 with the silicon nitride film 103 formed. COPYRIGHT: (C)2010,JPO&INPIT
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