发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
In a semiconductor chip in which LDMOSFET elements for power amplifier circuits used for a power amplifier module are formed, a source bump electrode is disposed on an LDMOSFET formation region in which a plurality of source regions, a plurality of drain regions and a plurality of gate electrodes for the LDMOSFET elements are formed. The source bump electrode is formed on a source pad mainly made of aluminum via a source conductor layer which is thicker than the source pad and mainly made of copper. No resin film is interposed between the source bump electrode and the source conductor layer.
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申请公布号 |
US2010109052(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090608751 |
申请日期 |
2009.10.29 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
NAKAJIMA SHIZUKI;NAGAI HIROYUKI;SHIRAI YUJI;NAKEJIMA HIROKAZU;KUSANO CHUSHIRO;HASEGAWA YU;YORITA CHIKO;OSONE YASUO |
分类号 |
H01L27/082;H01L21/8222;H01L27/088;H01L29/78 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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