发明名称 |
NAND-TYPE FLASH MEMORY AND NAND-TYPE FLASH MEMORY CONTROLLING METHOD |
摘要 |
A method of controlling a NAND-type flash memory provided with a latch circuit in which data is temporarily stored has measuring a first consumption current of the latch circuit in a first state in which the latch circuit is caused to retain first logic; measuring a second consumption current of the latch circuit in a second state in which the latch circuit is caused to retain second logic obtained by inverting the first logic; and comparing the first consumption current and the second consumption current to cause the latch circuit to retain logic corresponding to the state corresponding to a smaller one of the first consumption current and the second consumption current.
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申请公布号 |
US2010067302(A1) |
申请公布日期 |
2010.03.18 |
申请号 |
US20090544284 |
申请日期 |
2009.08.20 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FURUTA YUKA;WATANABE YOSHIHISA |
分类号 |
G11C16/04;G11C7/06;G11C7/10 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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