NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to prevent the loss of an active layer by forming an n-type electrode through mesa etching of a part of n-type nitride semiconductor. CONSTITUTION: A nitride semiconductor light emitting diode(100) comprises a p-type electrode layer(130), a p-type nitride semiconductor layer(125), an active layer(123), an n-type nitride semiconductor layer(121), an n-type electrode(150), and a transparent substrate(110). The p-type electrode layer is formed on a support substrate(140). The p-type nitride semiconductor layer and the active layer are laminated on the p-type electrode layer. The n-type nitride semiconductor layer is formed on the active layer. The n-type nitride semiconductor layer has a mesa structure. The n-type electrode is formed on an exposed region of the n-type nitride semiconductor layer. The transparent substrate comprises a light emission region emitting the light.