METHOD OF FORMING PARTIAL GERMANIUM-ON-INSULATOR STRUCTURE ACQUIRED BY CONCENTRATION OF GERMANIUM

摘要

PROBLEM TO BE SOLVED: To form at least one GeOI (Germanium-on-insulator) structure by concentration of germanium in an SiGe layer supported by a silicon oxide layer. SOLUTION: The silicon oxide layer is doped by germanium. The concentration of germanium in the silicon oxide layer lowers a flow temperature in the silicon oxide layer, to an oxidizing temperature or below enabling the concentration of the germanium in the SiGe region. COPYRIGHT: (C)2010,JPO&INPIT