| 摘要 |
<p>PURPOSE: A semiconductor device and a method of fabricating the same are provided to activate the n-type separate wall, by implementing a high speed heating annealing after removing a mask layer using the hydrofluoric acid. CONSTITUTION: A semiconductor film(30) includes a light incidence surface(30b) and a photodiode part(30a). An intermediate layer(62) is formed on the top of the surface of the semiconductor thin film, and has a convex surface. A concave surface reflecting layer(70) is formed on the surface of the convex surface, and a concave surface(70a) reflecting the light to the direction of the photodiode part. The photodiode part comprises a first area of a first conductivity type and a second part of a second conductivity type which is different from the first conductive type. An oxide film(50) is formed between the semiconductor thin film and the intermediate layer. A wiring layer(85) is formed on the intermediate layer.</p> |
