PREPARATION OF COPPER OXIDE THIN FILMS USING COPPER PRECURSOR BY ATOMIN LAYER DEPOSITION

摘要

PURPOSE: A manufacturing method of a copper oxide thin film by an atomic layer deposition method is provided to perform a process even in the low temperature, and to easily control the thickness of a thin film. CONSTITUTION: A manufacturing method of a copper oxide thin film is as follows. Copper species are absorbed on a substrate by supplying aminoalkoxide of a chemical formula 1. Copper elements which are not reacted and reaction products are removed from an atomic layer deposition reactor. Oxygen elements are supplied to the atomic layer deposition reactor, and oxidation reaction is generated by absorbing oxygen species on the substrate that the copper elements are absorbed. Oxygen elements which are not reacted and reaction products are removed from the atomic layer deposition reactor.