| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces a leakage current Idss of SBD while improving forward voltage Vf characteristics by incorporating the SBD in a power transistor, and a method of manufacturing the same. SOLUTION: In the semiconductor device 1, a power transistor cell T1 has a first trench 41 formed by connecting a first first-stage trench 411 and a first second-stage trench 412 to each other, and also has a second semiconductor region (a body region) 51 with a uniform width in a first semiconductor region (a drift layer) 3 along an internal wall of the first first-stage trench 411. A power transistor T2 adjoining the power transistor cell T1 has a second trench 42 formed by connecting a second first-stage trench 421 and a second second-stage trench 422 to each other, and also has a third semiconductor region (body region) 52 with a uniform width in the first semiconductor region (drift layer) 3 along an internal wall of the second first-stage trench 421. COPYRIGHT: (C)2010,JPO&INPIT
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