| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device which has a thin film transistor capable of suppressing an increase in off current. SOLUTION: The display device has the thin film transistor formed on a substrate, and the thin film transistor has, from the substrate side, a gate electrode, a gate insulating film formed covering even the gate electrode, and a semiconductor layer formed on an upper surface of the gate insulating film across the gate electrode. The semiconductor layer has a channel region and a source-drain region formed, and has an LDD region between the channel region and source-drain region. A channel electrode is formed overlapping the gate region in plan view without protruding toward the LDD region, and a nonconductive light absorbing material layer is formed in the same layer with or below the gate electrode to overlap the LDD region. COPYRIGHT: (C)2010,JPO&INPIT |
