发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, a semiconductor manufacturing apparatus, and a storage medium, which suppress abnormal arc discharge occurring when plasma is excited while preventing misalignment of a substrate placed on an electrostatic chuck. SOLUTION: The method includes: a first process in which a substrate to be processed is placed on an electrostatic chuck in a reaction container and a first electrostatic chuck voltage HV1 is applied to the electrostatic chuck to absorb the substrate to be processed onto the electrostatic chuck; a second process in which the first electrostatic chuck voltage HV1 is reduced to a second electrostatic chuck voltage HV2; a third process in which a high-frequency voltage is applied between parallel plate electrodes in the reaction container to generate plasma; and a fourth process in which the second electrostatic chuck voltage HV2 is changed to a third electrostatic chuck voltage HV3 higher than the second electrostatic chuck voltage HV2. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010010214(A) 申请公布日期 2010.01.14
申请号 JP20080164731 申请日期 2008.06.24
申请人 OKI SEMICONDUCTOR CO LTD 发明人 NODA SHUICHI
分类号 H01L21/3065;H01L21/205;H01L21/683 主分类号 H01L21/3065
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